PROCESS — Wafer in · chip out
A complete lithography cycle takes about 38 minutes inside the box.
Drop a 50 or 100 mm wafer into the chuck. The HEPA-filtered chamber settles in seconds.
step 01 phase load wafer t+ 00:30 state ok
Closed-loop spin coater lays down photoresist at the thickness you set — 0.7 to 2.5 µm.
step 02 phase resist coat t+ 02:00 state ok
On-device geometry engine rewrites your GDS for the optics: OPC, SRAFs, per-field dose.
step 03 phase mask gen t+ 00:45 state ok
365 nm i-line projection optic walks the stage field by field. Closed-loop dose & focus.
step 04 phase expose t+ 12:00 state ok
TMAH puddle develop, rinse, dry. The wafer comes out with your layout in resist.
step 05 phase develop t+ 01:30 state ok
Bright-field camera scans the wafer, flags defects and CD outliers, logs the run.
step 06 phase inspect t+ 00:20 state ok
07 — Materials